document no. d13160ej1v0ds00 (1st edition) date published april 2002 n cp(k) printed in japan silicon power transistor 2sA1744 pnp silicon epitaxial transistor for high-speed switching data sheet the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 2002 the 2sA1744 is a power transistor developed for high-speed switching and features a high h fe at low v ce(sat) . this transistor is ideal for use as a driver in dc/dc converters and actuators. in addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. features ? high h fe and low v ce(sat) : h fe 100 (v ce = ? 2 v, i c = ? 3 a) v ce(sat) 0.3 v (i c = ? 8 a, i b = ? 0.4 a) full-mold package that does not require an insulating board or bushing package drawing (unit: mm) electrode connection 1. base 2. collector 3. emitter absolute maximum ratings (t a = 25 c) parameter symbol ratings unit collector to base voltage v cbo ? 100 v collector to emitter voltage v ceo ? 60 v emitter to base voltage v ebo ? 7.0 v collector current (dc) i c(dc) ? 15 a collector current (pulse) i c(pulse) * ? 30 a base current (dc) i b(dc) ? 7.5 a total power dissipation p t (tc = 25 c) 30 w total power dissipation p t (ta = 25 c) 2.0 w junction temperature t j 150 c storage temperature t stg ? 55 to +150 c *pw 300 s, duty cycle 10% http://www..net/ datasheet pdf - http://www..net/
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parameter symbol conditions min. typ. max. unit collector to emitter voltage v ceo(sus) i c = ? 8.0 a, i b = ? 0.8 a, l = 1 mh ? 60 v collector to emitter voltage v cex(sus) i c = ? 8.0 a, i b1 = ? i b2 = ? 0.8 a, v be(off) = 1.5 v, l = 180 h, clamped ? 60 v collector cutoff current i cbo v cb = ? 60 v, i e = 0 ? 10 a collector cutoff current i cer v ce = ? 60 v, r be = 50 ? , t a = 125 c ? 1.0 ma collector cutoff current i cex1 v ce = ? 60 v, v be(off) = 1.5 v ? 10 a collector cutoff current i cex2 v ce = ? 60 v, v be(off) = 1.5 v, t a = 125 c ? 1.0 ma emitter cutoff current i ebo v eb = ? 5.0 v, i c = 0 ? 10 a dc current gain h fe1 * v ce = ? 2.0 v, i c = ? 1.5 a 100 dc current gain h fe2 * v ce = ? 2.0 v, i c = ? 3.0 a 100 400 dc current gain h fe3 * v ce = ? 2.0 v, i c = ? 8.0 a 60 collector saturation voltage v ce(sat)1 * i c = ? 8.0 a, i b = ? 0.4 a ? 0.3 v collector saturation voltage v ce(sat)2 * i c = ? 12 a, i b = ? 0.6 a ? 0.5 v base saturation voltage v be(sat)1 * i c = ? 8.0 a, i b = ? 0.4 a ? 1.2 v base saturation voltage v be(sat)2 * i c = ? 12 a, i b = ? 0.6 a ? 1.5 v collector capacitance c ob v cb = ? 10 v, i e = 0, f = 1.0 mhz 300 pf gain bandwidth product f t v ce = ? 10 v, i c = ? 1.5 a 80 mhz turn-on time t on 0.3 s storage time t stg 1.5 s fall time t f i c = ? 8.0 a, r l = 6.3 ? , i b1 = ? i b2 = ? 0.4 a, v cc ? ? 50 v refer to the test circuit. 0.3 s fe
marking m l k h fe2 100 to 200 150 to 300 200 to 400
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